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Research Article

Year : 2016 | Volume: 1 | Issue: 1 | Pages: 70-76

Fundamental Properties of Chemical Bath Deposited Bi2S3 Thin Films

R Brindha1*, K.B Renuka Devi2

doi:10.18831/djphys.org/2016011007

Corresponding author

R Brindha*

Department of Physics, Angel College of Engineering and Technology, Tirupur, India

  • 1. Department of Physics, Angel College of Engineering and Technology, Tirupur, India

Received on: 2015/12/15

Revised on: 2015/12/30

Accepted on: 2016/01/09

Published on: 2016/01/09

Abstract

Chemical bath deposition has been used to prepare thin films of Bi2S3 with different thicknesses on glass substrates under various operating temperatures. Quartz crystal monitor method was used to measure the thickness of the developed films. The study of the optical properties of the prepared thin films was carried out. The distinction between the band gap values of Bi2S3 thin film samples were found to be in the range of 2.16 to 2.45 eV. Grain size, strain and dislocation density which form the group of micro structural parameters have been assessed. The lattice parameter values ‘a’ and ‘c’ are calculated and is found to be 4.101Å and 6.68 Å respectively.

Keywords

Structural property, Optical property, Chemical bath deposition, Bi2S3, Thin films.