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Research Article

Year : 2017 | Volume: 2 | Issue: 2 | Pages: 1-5

Optical Properties of Porous Silicon Prepared at Different Etching Times

Shaymaa H Nawfal1*, Abdulazeez O Mousa2

doi:10.18831/djphys.org/2017021001

Corresponding author

Shaymaa H Nawfal*

Department of Physics, College of Science.

  • 1. Department of Physics, College of Science.

Received on: 2017/04/02

Revised on: 2017/05/06

Accepted on: 2017/06/17

Published on: 2017/07/18

Abstract

This study presents porous silicon (PSi) samples preparation by electrochemical etching method of p type silicon wafers of 100 degree orientation with different etching time (15, 17, 19, 21)min and with fixed electrolyte solution (40% HF: 99.98% CH3OH) (1:1). The optical property is described by Photo-Luminescence (PL). The PL measurements of PSi samples show that the energy gap increased after the etching process, and all samples exhibit blue shift with the increasing PL intensity.

Keywords

Porous silicon, Electrochemical etching, Photoluminescence, PL measurements, Energy gap.