AbstractRead PDF

IJMNP.,   Volume(2) - Issue(2), 2017
pp 1-5,   http://dx.doi.org/doi:10.18831/djphys.org/2017021001

Optical Properties of Porous Silicon Prepared at Different Etching Times

Shaymaa H Nawfal;Abdulazeez O Mousa

Abstract

This study presents porous silicon (PSi) samples preparation by electrochemical etching method of p type silicon wafers of 100 degree orientation with different etching time (15, 17, 19, 21)min and with fixed electrolyte solution (40% HF: 99.98% CH3OH) (1:1). The optical property is described by Photo-Luminescence (PL). The PL measurements of PSi samples show that the energy gap increased after the etching process, and all samples exhibit blue shift with the increasing PL intensity.

Keywords

Porous silicon, Electrochemical etching, Photoluminescence, PL measurements, Energy gap.

Received
02/04/2017
, Accepted
17/06/2017
Downloaded
12
, Viewed
0